
Samsung Takes Top Spot in U.S. Patents for 3rd Year Running while TSMC Rises into 2nd Place
• Samsung took nearly 2% of all patents granted in the U.S. in 2024. The company stayed on top and managed to grow its patent count year over year, from 6,165 in 2023 to 6,377 in 2024, a rise of 3%.
• TSMC climbed a rung in the ranking, bringing in 3,989 patents compared to 3,687 in 2023, an improvement of 8%.
Kioxia Technology Open Source Software Designed to Reduce DRAM Requirements in GenAI Systems
• The firm’s newly developed software AiSAQ contains a new ‘approximate nearest neighbor’ search (ANNS) algorithm, it delivers scalable performance for retrieval-augmented generation (RAG) without placing index data in DRAM – and instead searching directly on SSDs.
• RAG is a critical phase of AI that refines large language models (LLMs) with data specific to the company or application.
• Sandisk to Host Inaugural Investor Day 2025 to launch as a standalone Flash and memory technology innovator.


SK hynix Partners With SK Telecom and Penguin Solutions
• The partnership is to pursue the development and delivery of comprehensive AI data center (AIDC) solutions and lays the foundation for building globally competitive AI data centers. By combing unique technologies of SK Group, such as semiconductors, energy, cooling and memory, the company aims to discover and develop a highly competitive AI infrastructure business model.
Micron Breaks Ground on New HBM Advanced Packaging Facility in Singapore
• The new HBM advanced packaging facility will be the 1st facility of its kind in Singapore. Operations for the new facility are scheduled to begin in 2026, with meaningful expansion of Micron’s total advanced packaging capacity beginning in calendar 2027 to meet the demands of AI growth. The launch of this facility will further strengthen Singapore’s local semiconductor ecosystem and innovation.

WW SSD demand reached the highest level of total 2024 shipment amount in Q4’24, and shipment in 2025 1H is expected to climb up even higher than previous stage
Flash Sufficiency: maintain at low level since 2024/B
Price Trend: NAND flash price drops to a low level in Q4’24, and will stay there throughout 2025 considering the general demand isn’t significantly strong and key chip makers plan to execute production cut.
DRAM Sufficiency: maintain at extreme low level throughout 2024 but is likely to have more production in 2025 1H to fulfill HBM demands.
Price Trend: 8Gb contract price had a strong bound at Q1/E’24, price level is similar since then. In 2025, DRAM price might drop a bit in Q1 but tends to stay at a relatively high place from the lowest spot price level, considering possible production cut on DDR4.
| Type | Supply | Price | |
|---|---|---|---|
|
DRAM Module ![]() |
DDR3 | ● | ▂ |
| DDR4 | ● | ▂ | |
| DDR5 | ● | ▂ | |
|
Flash Storage ![]() |
SLC | ● | ▂ |
| MLC | ● | ▂ | |
|
3D TLC (BiCS3) *Limited Supply. We encourage you to migrate to BiCS5 |
● | ▂ | |
|
3D TLC (BiCS4) * Tight supply. We encourage you to migrate to BICS5. |
● | ▂ | |
| 3D TLC (BiCS5) | ● | ▂ |
●Smooth Supply ● Mildly Tight Supply ● Tight supply ▂ Flat ▲ Upward trend ▼ Downward trend

SSD SMART 是什麼?本文解析 SATA 與 NVMe SMART 差異,說明 Power On Hours、Temperature、Percentage Used、Available Spare 等常見健康參數,協助 Edge Storage 與工業設備掌握 SSD 健康狀態。

完整解析車用 SSD :AEC-Q100 IC 溫度等級(Grade 0~3)、IATF 16949、ISO/SAE 21434 資安與 PLP、pSLC 等子系統規格,並比較 eMMC/UFS/SSD 差異。威剛工業級提供車載、鐵道 NVR 與邊緣運算的寬溫儲存方案與選型支援。

Erfahren Sie, was eine NVMe-SSD ist, wie sich NVMe von SATA-SSDs unterscheidet und warum NVMe-Speicher ideal für die Automatisierung, industrielle Systeme und die hochfrequente Datenprotokollierung ist.

Erfahren Sie, was ECC-DRAM ist, wie die Fehlerkorrektur funktioniert und warum sie für Datenintegrität, Systemstabilität, Netzwerksicherheit und geschäftskritisches Computing wichtig ist.

Hauptaspekte bei der Auswahl des NVR-Speichers: Vergleichen Sie für den Aufbau eines stabilen, leistungsstarken Überwachungssystems die Speicheranforderungen von Festplatte, SSD, Überwachungs-SSD und KI-NVR.

Temperatur ist ein stiller Begrenzer jeder SSD und der SSD-Temperaturbereich ist sowohl eine Leistungs- als auch eine Zuverlässigkeitsmerkmal. Bei anhaltender Last überwacht die NVMe-Firmware eine Gesamttemperatur und beginnt je nach Bedarf mit einer leichten oder starken Drosselung. Daher sinkt der Schreibdurchsatz stark und die Latenz steigt deutlich an. Hohe Temperaturen beschleunigen zudem den Ladungsverlust im NAND-Speicher, was den Verlust der Speicherkapazität beschleunigt. Der Effekt verschlimmert sich mit dem Verschleiß der Zellen durch zunehmende Programmier- und Löschzyklen. Daher nimmt die Lebensdauer schneller ab, während Probleme mit der Datenspeicherung zunehmen, wenn das Laufwerk später nicht mehr mit Strom versorgt wird.