Samsung unveiled its plans for the future. At Tech Day 2022 and aid out plans for its upcoming 1.4nm process node, memory roadmap, and goals to expand its industry outreach. The company currently offers 512 Gb triple-level cell (TLC) products for V-NAND but anticipates releasing a 1 terabyte TLC version later this year. The fifth-generation DRAM offering will be a 10nm (1b) device and will enter mass production in 2023. Other DRAM solutions coming soon include a 32 Gb DDR5 solution, 8.5 Gbps LPDDR5X DRAM, and 36 Gbps GDDR7 DRAM.
KIOXIA said it would reduce its output by approximately 30% of 3D NAND memory at its fabs located at its Yokkaichi and Kitakami sites starting from October. Demand for PCs and many other devices is slowing due to high inflation rates, geopolitical tensions, and producers of commodities want to reduce inventories and avoid oversupply, so they have to cut down production.
South Korea's SK Hynix Inc said on Wednesday it has received authorization from the U.S. Department of Commerce to receive chip equipment needed for its chip production facilities in China for one year, without seeking additional licensing requirements.
Micron announced plans to build the largest chip production complex in central New York state. The plan will span 20 years of construction and upgrades, with a total price tag expected to hit around $100 billion by the time Micron is finished in the 2040s. Micron's new site near Clay, New York, will not only be the company's largest campus ever built, but will also be the largest chip fab in the USA.
Except PC DRAM, global output keeps growing gradually in a low growth rate because of the weak demand.
Type | Supply | Price | |
---|---|---|---|
DRAM Module |
DDR3 | ● | ▼ |
DDR4 | ● | ▼ | |
DDR5 | ● | ▼ | |
Flash Storage |
SLC | ● | ▂ |
MLC | ● | ▂ | |
3D TLC (BiCS3) | ● | ▂ | |
3D TLC (BiCS4) | ● | ▼ | |
3D TLC (BiCS5) | ● | ▼ |
● Smooth supply ● Tight supply ▂ Flat ▲ Upward trend ▼ Downward trend
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