
Samsung to become largest shareholder in Rainbow Robotics accelerating future robot development
• The firm will exercise call option to increase stake to 35% and incorporate Rainbow Robotics as a subsidiary. By combining Samsung Electronics’ AI and software technology with Rainbow Robotics’ robotics technology, the collaboration plans to accelerate the development of intelligent advanced humanoids.
Kioxia achieves SPICE CL2 certification of UFS V.4.0 for automotive applications
• Automotive SPICE level 2 certification signifies that Kioxia has implemented structured processes for project management and software development, ensuring consistent quality and traceability.
• Universal flash storage (UFS) Ver. 4.0 devices deliver fast embedded storage transfer speeds in small package size and are targeted to variety of next-gen automotive applications, including infotainment, integrated cockpit system, ADAS and autonomous driving.
New Sandisk coming soon
• As a standalone flash and memory technology innovator in WDC, Sandisk is about to issue its new corporate logo in early 2025. It’s clean lines and minimalist design mirror the speed and efficiency of flash technology.


SK hynix Starts Mass Production of 4D NAND Flash with 1Tb Capacity
• The firm plans to provide the 321-high products from the 1H25 as the 1st supplier of the 4D NAND with more than 300 layers by finding a technological breakthrough for stacking.
• This new product comes with an improvement of 12% in data transfer speed,13% in reading performance compared with previous-gen, and data reading power efficiency enhancement by more than 10%.
Micron's HBM4E heralds a new era of customized memory for AI GPUs and beyond
• With a 2048-bit memory interface, HBM4E enables Micron to offer customized base dies for certain customers, providing more optimized solutions with potentially additional features. The custom logic dies are set to be made by TSMC using an advanced node, allowing them to pack more caches and logic for added performance and functionality.
• The HBM4E will follow mass production of HBM4 in 2026, and will definitely mark a step toward customized memory solutions for bandwidth-hungry AI, HPC, networking, and other applications.

WW SSD demand is expected to reach the peak in the end of 2024, and 2025 shipment is expected to stay at high level
Flash Sufficiency: maintain at low level since 2024/B
Price Trend: NAND flash price drops to a low level in Q4’24, and will stay there throughout 2025 waiting for a new wave of strong demand
DRAM Sufficiency: maintain at extreme low level throughout 2024 but is likely to have more production in 2025 1H to fulfill HBM demands
Price Trend: 8Gb contract price had a strong bound at Q1/E’24, price level is similar since then. In 2025, DRAM price might drop a bit but stays at a relatively high place from the lowest spot price level
| Type | Supply | Price | |
|---|---|---|---|
|
DRAM Module ![]() |
DDR3 | ● | ▂ |
| DDR4 | ● | ▼ | |
| DDR5 | ● | ▼ | |
|
Flash Storage ![]() |
SLC | ● | ▂ |
| MLC | ● | ▂ | |
|
3D TLC (BiCS3) *Limited Supply. We encourage you to migrate to BiCS5 |
● | ▂ | |
|
3D TLC (BiCS4) * Tight supply. We encourage you to migrate to BICS5. |
● | ▂ | |
| 3D TLC (BiCS5) | ● | ▼ |
●Smooth Supply ● Mildly Tight Supply ● Tight supply ▂ Flat ▲ Upward trend ▼ Downward trend

SSD SMART 是什麼?本文解析 SATA 與 NVMe SMART 差異,說明 Power On Hours、Temperature、Percentage Used、Available Spare 等常見健康參數,協助 Edge Storage 與工業設備掌握 SSD 健康狀態。

完整解析車用 SSD :AEC-Q100 IC 溫度等級(Grade 0~3)、IATF 16949、ISO/SAE 21434 資安與 PLP、pSLC 等子系統規格,並比較 eMMC/UFS/SSD 差異。威剛工業級提供車載、鐵道 NVR 與邊緣運算的寬溫儲存方案與選型支援。

NVMe SSDとは何か、NVMeとSATA SSDとの違い、そしてNVMeストレージが自動化、産業用システム、および高頻度データロギングに最適な理由について解説します。

ECC DRAMとは何か、エラー訂正の仕組み、そしてデータの整合性、システムの安定性、ネットワークセキュリティ、ミッションクリティカルなコンピューティングにおいて重要となる理由について解説します。

NVRストレージを選定する際の主な検討事項:HDD、SSD、監視用SSD、およびAI NVRのストレージ要件を比較し、安定した高性能監視システムを構築しましょう。

温度はすべてのSSDを左右する隠れた制限要因であり、SSDの温度範囲は性能仕様であると同時に信頼性仕様でもあります。持続的な負荷がかかると、NVMeファームウェアは複合温度を監視し、軽度または大幅なサーマルスロットリングを開始します。その結果、書き込みスループットが低下し、遅延は急上昇します。また、熱はNAND内部の電荷漏れを加速させ、保持期間の劣化を早めます。この影響は、プログラム/消去サイクルによってセルの劣化が進むほど悪化します。このため、耐久性の消耗が早まり、後にドライブが無通電状態で放置された際のデータ保持トラブルのリスクも高まります。