Monthly Memory & Flash Market Watch

Kioxia and Sandisk Unveils Next-Gen 3D Flash Memory Technology Achieving 4.8Gb/s NAND Interface Speed

• Technologies: 1. CBA (CMOS directly Bonded to Array) 2. novel command address input method based on SCA (Separate Command Address) protocol 3. PI-LTT (Power Isolated Low-Tapped Termination) technology to reduce power consumption during data input/output

• The companies expect the new 3D flash memory to achieve a 33% improvement in NAND interface speed compared with their 8th Gen 3D flash memory currently in mass production. The technology also reduces power consumption by 10% for input and 34% for output, thereby achieving a balance of high performance and low power consumption. By increasing the number of memory layers to 332 and optimizing the floor plan for increased planar density, the technologyimproves bit density by 59%.

SK hynix Acquires TISAX Certification for Domestic Sites

• The firm aims to cooperate with global automakers and major automotive parts companies more intensively with this certificate, and lead the next gen automotive memory market by building trust with customers based on a thorough security system.(*TISAX: a global information security certification system aiming to standardize information security between companies in the automotive industry supply chain)