
Mass Production of Up to 36GB HBM4 Memory With Performance for AI Computing
• Samsung has started mass production of its HBM4 memory, becoming the first in the industry to do so. The chip reaches 11.7Gb/s and up to 13Gb/s for high‑performance AI workloads. It offers 24–36GB capacities via 12‑layer stacking, with plans to reach 48GB. HBM4 also delivers 40% better power efficiency and improved thermal performance.
KIOXIA Sampling QLC UFS V.4.1 Embedded Flash Memory Devices for High-Capacity Mobile Storage
• The chips use 8th‑generation BiCS FLASH 3D NAND and deliver major performance gains, including 25% faster sequential writes, 90% faster random reads, and 95% faster random writes over the previous generation. These devices target smartphones, tablets, PCs, AR/VR, IoT, and AI‑enabled products.
SanDisk AI‑driven storage upside: stock price jumps by 1,500% in almost a year
• AI data centers, hyperscalers, and enterprise customers are the primary growth engines, with revenue from AI‑related and semi‑custom clients rising 76% year over year. Besides, the firm’s industrial and automotive storage revenue grew 63%, showing that demand strength extends beyond pure AI infrastructure.


SKhynix to Establish U.S. Arm Specialized in AI Solutions
• SKhynix will establish a U.S.-based AI solutions subsidiary to drive new AI growth opportunities. Plans to leverage its advanced memory technologies, such as HBM, to deliver optimized AI data center systems and strengthen competitiveness. AI Co. will be formed through the restructuring of Solidigm, with SK hynix committing $10 billion in capital on a call basis. The new unit aims to enhance global AI strategies and deepen collaborations with AI firms in the U.S. and beyond.
Micron Breaks Ground on Advanced Wafer Fabrication Facility in Singapore
• Micron has begun construction on a new advanced wafer fabrication facility in Singapore. The company will invest about US$24 billion over 10 years to expand NAND manufacturing capacity. Production is expected to start in the second half of 2028 to meet rising AI‑related demand. The new fab will bolster Micron’s NAND Center of Excellence and support future technology transitions.

Driven by AI and datacenter growth, NAND flash demand has shifted sharply toward high-capacity enterprise SSDs, prompting a steady rise in 3D NAND output and a decline in Planar NAND—signaling a structural transition in supply to meet evolving market needs
Flash Sufficiency: CSP-driven AI expansion caused severe NAND shortages starting from Q3’25, and this might gradually improve in 2H26.
Price Trend: Overall NAND flash price rose sharply in Q4’25 with enterprise and cloud service provider (CSP) demand surging—driven by AI infrastructure expansion and server upgrades. The market condition is projected to continue in 2026, sustaining NAND flash prices at a high level.
DRAM Sufficiency: otal DRAM sufficiency remains in negative territory, indicating persistent undersupply, but the shortage begins to ease gradually after 1Q26.
Price Trend: DDR5 16Gb 5600MHz prices show a clear upward trend through 2025 into early 2026, with both contract and spot prices rising sharply from 4Q25 to 1Q26.

SSD SMART 是什麼?本文解析 SATA 與 NVMe SMART 差異,說明 Power On Hours、Temperature、Percentage Used、Available Spare 等常見健康參數,協助 Edge Storage 與工業設備掌握 SSD 健康狀態。

完整解析車用 SSD :AEC-Q100 IC 溫度等級(Grade 0~3)、IATF 16949、ISO/SAE 21434 資安與 PLP、pSLC 等子系統規格,並比較 eMMC/UFS/SSD 差異。威剛工業級提供車載、鐵道 NVR 與邊緣運算的寬溫儲存方案與選型支援。

NVMe SSDとは何か、NVMeとSATA SSDとの違い、そしてNVMeストレージが自動化、産業用システム、および高頻度データロギングに最適な理由について解説します。

ECC DRAMとは何か、エラー訂正の仕組み、そしてデータの整合性、システムの安定性、ネットワークセキュリティ、ミッションクリティカルなコンピューティングにおいて重要となる理由について解説します。

NVRストレージを選定する際の主な検討事項:HDD、SSD、監視用SSD、およびAI NVRのストレージ要件を比較し、安定した高性能監視システムを構築しましょう。

温度はすべてのSSDを左右する隠れた制限要因であり、SSDの温度範囲は性能仕様であると同時に信頼性仕様でもあります。持続的な負荷がかかると、NVMeファームウェアは複合温度を監視し、軽度または大幅なサーマルスロットリングを開始します。その結果、書き込みスループットが低下し、遅延は急上昇します。また、熱はNAND内部の電荷漏れを加速させ、保持期間の劣化を早めます。この影響は、プログラム/消去サイクルによってセルの劣化が進むほど悪化します。このため、耐久性の消耗が早まり、後にドライブが無通電状態で放置された際のデータ保持トラブルのリスクも高まります。