
Samsung achieves record profit growth amid AI infrastructure boom
• The rapid expansion of AI infrastructure has driven exceptional demand for DRAM, HBM, and NAND, resulting in significant memory price increases and higher profitability for suppliers.Samsung's semiconductor division generated approximately 94% of the company's total operating profit in Q1 2026, highlighting the critical role of memory in the AI infrastructure value chain, and its $58.5B in Q2 2026 operating profit, a 19x YoY increase, surpasses Nvidia's latest quarterly operating profit and becomes the world's most profitable technology company for the period.
Kioxia and Sandisk sample world's densest 3D NAND — new 332-Layer beats Samsung’s 400-Layer NAND
• The 2 firms are shifting the NAND competition from a "layer-count race" to a density, performance, and AI-storage optimization strategy, with BiCS10 establishing a new benchmark for enterprise flash technology. BiCS10 is positioned mainly for enterprise and hyperscale data centers, while BiCS9 will continue serving mainstream client SSD markets.
Technology Highlights
• Achieves industry-leading areal density exceeding 29 Gb/mm², surpassing Samsung's latest 400+ layer V-NAND in storage density despite having fewer layer.
• Delivers up to 4,800 MT/s interface speed, supporting next-generation PCIe 5.0/6.0 enterprise SSDs.
• Provides approximately 59% higher bit density than BiCS8, enabling larger SSD capacities and lower cost per bit over time.


SK hynix at center of AI-driven memory crunch as capacity hits zero, prompting customers to fund fabs and EUV tools to secure supply
• SK hynix has become a central bottleneck in the AI-driven memory supply chain, with its available capacity effectively fully booked due to surging demand for HBM, DRAM, and NAND. In response, major tech customers are offering to fund new fabs and even purchase costly EUV lithography equipment to secure long-term supply, moving far beyond traditional procurement models. However, SK hynix remains cautious, as accepting such arrangements could limit its pricing power and strategic flexibility in an extremely tight, supplier-driven market.
Micron expands U.S. investment to $250B and strengthens domestic supply chain
•Micron will invest $500 million in GlobalWafers' Sherman, Texas facility, the only U.S.-based producer of advanced 300mm silicon wafers, a critical raw material for semiconductor manufacturing.As a major supplier of memory used in AI servers, Micron continues to benefit from growing demand for high-performance memory solutions supporting AI infrastructure.The investment reflects a broader industry trend toward strengthening U.S.-based semiconductor manufacturing and reducing reliance on overseas supply chains.

demand for legacy‑node SSDs is minimal within overall SSD shipments. Rapid expansion in AI‑related applications in 2026 is expected to drive sustained growth in demand for mainstream advanced‑node 3D‑type SSD products.
Flash Sufficiency: NAND supply remains relatively tight throughout 2026-2027, with sufficiency improving from -5.8% in early 2026 to near-balanced levels in 2027. While overall supply conditions improve, manufacturers continue prioritizing AI-related SSD and datacenter products, limiting capacity available for mainstream applications.
Price Trend: NAND Flash contract prices rise sharply through mid-2026 before stabilizing through 2027 as the market gradually transitions toward a more balanced supply-demand environment while maintaining generally elevated price level.
DRAM Sufficiency: DRAM supply remains structurally tight throughout 2026-2027, despite a brief period of near-balanced supply in mid-2026. Ongoing capacity migration toward HBM and advanced-node products, combined with sustained AI-driven demand growth, limits availability of conventional DRAM and deepens the supply deficit to approximately -7% by late 2027.
Price Trend: DRAM spot and contract prices are expected to rise steadily, reflecting persistent supply constraints and strong demand from AI servers, HBM, and higher-capacity memory platforms. Spot market supply is significantly tighter because suppliers prioritize long-term contracted customers, while buyers in the spot market compete for limited available inventory. This premium is further amplified by speculative buying and urgent replenishment demand.

SSD SMART 是什麼?本文解析 SATA 與 NVMe SMART 差異,說明 Power On Hours、Temperature、Percentage Used、Available Spare 等常見健康參數,協助 Edge Storage 與工業設備掌握 SSD 健康狀態。

完整解析車用 SSD :AEC-Q100 IC 溫度等級(Grade 0~3)、IATF 16949、ISO/SAE 21434 資安與 PLP、pSLC 等子系統規格,並比較 eMMC/UFS/SSD 差異。威剛工業級提供車載、鐵道 NVR 與邊緣運算的寬溫儲存方案與選型支援。

NVMe SSD가 무엇인지, NVMe가 SATA SSD와 어떻게 다른지, 그리고 NVMe 스토리지가 자동화, 산업용 시스템 및 높은 빈도의 데이터 로깅에 왜 적합한지 알아보세요.

안정적인 컴퓨팅을 위한 오류 교정 메모리 이해하기

NVR 스토리지 선택 시 고려해야 할 핵심 사항: 안정적이고 고성능의 감시 시스템을 구축하기 위해 HDD, SSD, 감시용 SSD 및 AI NVR 스토리지 요구 사항을 비교합니다

온도는 모든 SSD에서 보이지 않는 제한 요소이며 SSD 온도 범위는 성능 사양이자 신뢰성 사양이기도 합니다. 지속적인 부하가 걸리면 NVMe 펌웨어는 종합 온도를 추적하고 가볍거나 강하게 스로틀링을 시작합니다. 그래서 쓰기 처리량은 크게 떨어지고 지연 시간은 급증합니다. 열은 NAND 내부의 전하 누설도 가속시켜 데이터 유지력 감소를 빠르게 만듭니다. 이 효과는 셀이 프로그램/지우기 마모로 노화될수록 더 심해집니다. 따라서 드라이브가 나중에 전원이 꺼진 상태로 남아 있을 때 내구성을 더 빨리 소모하고 데이터 보존 문제의 위험도 높아집니다.