
三星聘請前AMD資深工程師,加速內部CPU核心研發進程
三星的目標是將自家CPU用於智能手機和筆電。基於此新研發項目的首批處理器,預期於2027問世;三星將放棄原有的Exynos品牌名稱,而改稱為“Galaxy Chip(s)”。
KIOXIA和WDC發表其共同研發的第八代全新快閃記憶體技術,採218層堆疊工藝
這兩家公司是全球首先推出具備 3200 MT/s I/O 快閃記憶體 IC 的 3D NAND 製造商,領先其競爭對手約33%。


SK海力士於近期公佈其第八代3D NAND Flash細節,產品堆疊層數超過300層
2024-2025年新製程的3D NAND Flash,位元密度將提高近一倍,每片晶圓生產率也將顯著提高。
· 美光DRAM營收同期減少41.2%,成為營收降幅最大的供應商
· 美光DRAM產能利用率降至84%,預計2023全年將維持在相同水平
· 美光最新1β奈米製程已開始量產
1β奈米製程也將導入美光在台工廠,預計2023年中投入晶圆,並於下半年量产

| Type | Supply | Price | |
|---|---|---|---|
|
DRAM Module ![]() |
DDR3 | ● | ▼ |
| DDR4 | ● | ▼ | |
| DDR5 | ● | ▼ | |
|
Flash Storage ![]() |
SLC | ● | ▂ |
| MLC | ● | ▂ | |
|
3D TLC (BiCS3) *供給有限, 建議採用BiCS4或BiCS5 |
● | ▂ | |
| 3D TLC (BiCS4) | ● | ▂ | |
| 3D TLC (BiCS5) | ● | ▼ |
● 供給穩定 ● 供給吃緊 ▂ 持平 ▲ 上揚 ▼ 下跌
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