
Samsung focused heavily on AI-driven growth, HBM4 development, and strategic positioning against competitors
• The company is intensifying efforts to regain leadership in the HBM segment, where SK Hynix has recently gained ground.It also presented AI-optimized DRAM and NAND solutions on the roadmap, emphasizing scalability and energy efficiency for data centers and HPC applications.
Kioxia and SanDisk have officially begun operations at their new semiconductor fabrication facility in Kitakami, Japan
• This facility incorporates advanced environmental technologies, including energy-efficient systems and water recycling, which is a long-standing collaboration in NAND flash memory production between two firms, aiming to support next-generation storage solutions for consumer and enterprise applications.


SK hynix officially started mass production of HBM4, featuring 36GB per chip and up to 2TB/s bandwidth
• This memory is optimized for NVIDIA’s Rubin AI accelerators, offering up to 60% speed improvement over previous generations. It’s also designed to meet the demands of AI servers, data centers, and edge computing.
Micron announced a $200 billion investment in domestic semiconductor manufacturing
• The company is accelerating its memory production strategy by investing heavily in U.S.-based facilities, aiming to reshore memory production and reduce reliance on overseas manufacturing, especially for AI-driven high-bandwidth memory (HBM). It plans to phase out DDR4 and LPDDR4X production by late 2025 to early 2026.

WW SSD demand recovers from relatively lower level in Q2, and is expected to stay at a higher level than current stage in 2026.
Flash Sufficiency: maintain at low level since 2024. Suppliers have strengthened their production reduction efforts, concentrating manufacturing resources on AI-related demand.
Price Trend: overall NAND flash price is expected to increase continuously in Q4 with enterprise and cloud service provider (CSP) demand surging—driven by AI infrastructure expansion and server upgrades.
DRAM Sufficiency: Supply has come under significant pressure from Q4’25 through 2026 1H, as manufacturers phase out DDR4 production and reallocate capacity toward high-demand applications from the CSPs. This shift has led to a pronounced tightening in overall DRAM availability.
Price Trend: DDR4 prices remain high due to ongoing production cuts. Strong demand from CSPs and enterprise servers has tightened DDR5 supply, with manufacturers prioritizing DDR5 and HBM, driving prices up through Q4.

醫療設備正在快速數位化。從實務上來看,醫學影像、病患監測、內視鏡系統、自動調劑櫃,到醫療邊緣閘道器,越來越多設備負責執行檢查或治療流程也同時需要即時記錄影像、感測數據、操作紀錄、警報事件與系統狀態。 對醫療設備製造商來說,儲存裝置已經從容量規格的一部分,升級為影響資料完整性、設備穩定性與產品生命週期的重要元件。

了解 NVMe SSD 的定義、NVMe 與 SATA SSD 的差異,以及為何 NVMe 儲存裝置適合自動化、工業系統和高頻資料記錄

了解 ECC DRAM 的定義、除錯運作原理,以及它對資料完整性、系統穩定性、網路安全與關鍵任務運算的重要性。

解析NVR Storage選購重點,深入比較HDD和SSD、Surveillance SSD與AI NVR儲存需求,打造穩定高效的監控系統

溫度是每顆 SSD 的隱形限制器,而 SSD 溫度範圍既是效能規格也是可靠性規格。在持續負載下,NVMe 韌體會追蹤複合溫度,並會開始輕度或重度節流。因此,寫入吞吐量大幅下降,延遲飆升。高溫也會加速 NAND 內部的電荷洩漏,這會加速資料保留損失。隨著單元因編程/抹除磨損而老化,這種效應會惡化。因此,當硬碟稍後保持未通電狀態時,您會更快消耗耐用度並提高資料保留問題的風險。

SSD 中的垃圾回收是控制器的靜態清理工作。它將仍然有效的頁面壓縮到新空間,並抹除現在大多是垃圾的區塊。這聽起來很奇怪,直到您記起 NAND 快閃記憶體無法覆寫已編程的頁面。它必須先抹除,而抹除是在區塊層級進行,而非每個頁面。因此,更新變成「先寫到別處,之後再清理」。