
Mass Production of Up to 36GB HBM4 Memory With Performance for AI Computing
• Samsung has started mass production of its HBM4 memory, becoming the first in the industry to do so. The chip reaches 11.7Gb/s and up to 13Gb/s for high‑performance AI workloads. It offers 24–36GB capacities via 12‑layer stacking, with plans to reach 48GB. HBM4 also delivers 40% better power efficiency and improved thermal performance.
KIOXIA Sampling QLC UFS V.4.1 Embedded Flash Memory Devices for High-Capacity Mobile Storage
• The chips use 8th‑generation BiCS FLASH 3D NAND and deliver major performance gains, including 25% faster sequential writes, 90% faster random reads, and 95% faster random writes over the previous generation. These devices target smartphones, tablets, PCs, AR/VR, IoT, and AI‑enabled products.
SanDisk AI‑driven storage upside: stock price jumps by 1,500% in almost a year
• AI data centers, hyperscalers, and enterprise customers are the primary growth engines, with revenue from AI‑related and semi‑custom clients rising 76% year over year. Besides, the firm’s industrial and automotive storage revenue grew 63%, showing that demand strength extends beyond pure AI infrastructure.


SKhynix to Establish U.S. Arm Specialized in AI Solutions
• SKhynix will establish a U.S.-based AI solutions subsidiary to drive new AI growth opportunities. Plans to leverage its advanced memory technologies, such as HBM, to deliver optimized AI data center systems and strengthen competitiveness. AI Co. will be formed through the restructuring of Solidigm, with SK hynix committing $10 billion in capital on a call basis. The new unit aims to enhance global AI strategies and deepen collaborations with AI firms in the U.S. and beyond.
Micron Breaks Ground on Advanced Wafer Fabrication Facility in Singapore
• Micron has begun construction on a new advanced wafer fabrication facility in Singapore. The company will invest about US$24 billion over 10 years to expand NAND manufacturing capacity. Production is expected to start in the second half of 2028 to meet rising AI‑related demand. The new fab will bolster Micron’s NAND Center of Excellence and support future technology transitions.

Driven by AI and datacenter growth, NAND flash demand has shifted sharply toward high-capacity enterprise SSDs, prompting a steady rise in 3D NAND output and a decline in Planar NAND—signaling a structural transition in supply to meet evolving market needs
Flash Sufficiency: CSP-driven AI expansion caused severe NAND shortages starting from Q3’25, and this might gradually improve in 2H26.
Price Trend: Overall NAND flash price rose sharply in Q4’25 with enterprise and cloud service provider (CSP) demand surging—driven by AI infrastructure expansion and server upgrades. The market condition is projected to continue in 2026, sustaining NAND flash prices at a high level.
DRAM Sufficiency: otal DRAM sufficiency remains in negative territory, indicating persistent undersupply, but the shortage begins to ease gradually after 1Q26.
Price Trend: DDR5 16Gb 5600MHz prices show a clear upward trend through 2025 into early 2026, with both contract and spot prices rising sharply from 4Q25 to 1Q26.

醫療設備正在快速數位化。從實務上來看,醫學影像、病患監測、內視鏡系統、自動調劑櫃,到醫療邊緣閘道器,越來越多設備負責執行檢查或治療流程也同時需要即時記錄影像、感測數據、操作紀錄、警報事件與系統狀態。 對醫療設備製造商來說,儲存裝置已經從容量規格的一部分,升級為影響資料完整性、設備穩定性與產品生命週期的重要元件。

了解 NVMe SSD 的定義、NVMe 與 SATA SSD 的差異,以及為何 NVMe 儲存裝置適合自動化、工業系統和高頻資料記錄

了解 ECC DRAM 的定義、除錯運作原理,以及它對資料完整性、系統穩定性、網路安全與關鍵任務運算的重要性。

解析NVR Storage選購重點,深入比較HDD和SSD、Surveillance SSD與AI NVR儲存需求,打造穩定高效的監控系統

溫度是每顆 SSD 的隱形限制器,而 SSD 溫度範圍既是效能規格也是可靠性規格。在持續負載下,NVMe 韌體會追蹤複合溫度,並會開始輕度或重度節流。因此,寫入吞吐量大幅下降,延遲飆升。高溫也會加速 NAND 內部的電荷洩漏,這會加速資料保留損失。隨著單元因編程/抹除磨損而老化,這種效應會惡化。因此,當硬碟稍後保持未通電狀態時,您會更快消耗耐用度並提高資料保留問題的風險。

SSD 中的垃圾回收是控制器的靜態清理工作。它將仍然有效的頁面壓縮到新空間,並抹除現在大多是垃圾的區塊。這聽起來很奇怪,直到您記起 NAND 快閃記憶體無法覆寫已編程的頁面。它必須先抹除,而抹除是在區塊層級進行,而非每個頁面。因此,更新變成「先寫到別處,之後再清理」。