
Samsung and AMD expand strategic collaboration on next-generation AI memory solutions
• Samsung has expanded its strategic partnership with AMD through an MOU to support next‑generation AI memory and computing platforms, which underscores its competitiveness in the rapidly expanding HBM and AI memory market, aligning supply with long‑term AI demand driven by data‑center and accelerator growth.
Kioxia discontinues 2D NAND products — 1980s planar NAND memory reaches end of life
• The discontinuation covers all major cell types (SLC, MLC, TLC) and multiple process nodes (32nm, 24nm, 15nm), as well as early 64‑layer BiCS3 3D NAND, indicating a comprehensive shutdown of legacy production lines rather than selective SKU cuts.The decision reflects Kioxia’s intent to prioritize capacity for higher‑margin NAND used in AI, data‑center, and enterprise storage applications, where demand growth and pricing power are significantly stronger than in legacy markets.


SK hynix and Sandisk begin global standardization of next-gen memory"HBF"
• Both companies highlighted that AI workloads are shifting from training to inference, where continuous operation, high concurrency, and energy efficiency place new demands on memory architectures.The companies expect complex, multi‑tier memory architectures to see meaningful demand growth around 2030, with early standardization laying the groundwork for future commercialization. High Bandwidth Flash (HBF) is designed as a new memory layer between HBM and SSD, addressing the gap between ultra‑high bandwidth and large capacity while improving scalability and power efficiency for AI inference workloads.
Micron Technology reported record fiscal 2Q26 revenue of USD 23.86 billion
•The number represents a 74.9% sequential increase and a 196.4% year‑over‑year surge, marking the company’s strongest quarterly performance to date. Management noted that current market conditions remain favorable, with continued strength expected in fiscal 3Q26 as AI‑driven demand persists and supply discipline is maintained across the industry.

Demand for legacy‑node SSDs is minimal within overall SSD shipments. Rapid expansion in AI‑related applications in 2026 is expected to drive sustained growth in demand for mainstream advanced‑node 3D‑type SSD products.
Flash Sufficiency: CSP-driven AI expansion caused severe NAND shortages starting from Q3’25, and this might last during the entire 2026.
Price Trend: overall NAND flash price rose sharply in Q4’25 with enterprise and cloud service provider (CSP) demand surging—driven by AI infrastructure expansion and server upgrades. The market condition is projected to continue in 2026, sustaining NAND flash prices at a high level.
DRAM Sufficiency: otal Supply has come under significant pressure from Q3’25 through 2026 1H, as manufacturers phase out DDR4 production and reallocate capacity toward high-demand applications from the CSPs. This shift has led to a pronounced tightening in overall DRAM availability.
Price Trend: DDR4 price has risen sharply across both spot and contract markets, driven by CSP-led demand absorbing supply and growing HBM allocation crowding out commodity DRAM capacity.

醫療設備正在快速數位化。從實務上來看,醫學影像、病患監測、內視鏡系統、自動調劑櫃,到醫療邊緣閘道器,越來越多設備負責執行檢查或治療流程也同時需要即時記錄影像、感測數據、操作紀錄、警報事件與系統狀態。 對醫療設備製造商來說,儲存裝置已經從容量規格的一部分,升級為影響資料完整性、設備穩定性與產品生命週期的重要元件。

了解 NVMe SSD 的定義、NVMe 與 SATA SSD 的差異,以及為何 NVMe 儲存裝置適合自動化、工業系統和高頻資料記錄

了解 ECC DRAM 的定義、除錯運作原理,以及它對資料完整性、系統穩定性、網路安全與關鍵任務運算的重要性。

解析NVR Storage選購重點,深入比較HDD和SSD、Surveillance SSD與AI NVR儲存需求,打造穩定高效的監控系統

溫度是每顆 SSD 的隱形限制器,而 SSD 溫度範圍既是效能規格也是可靠性規格。在持續負載下,NVMe 韌體會追蹤複合溫度,並會開始輕度或重度節流。因此,寫入吞吐量大幅下降,延遲飆升。高溫也會加速 NAND 內部的電荷洩漏,這會加速資料保留損失。隨著單元因編程/抹除磨損而老化,這種效應會惡化。因此,當硬碟稍後保持未通電狀態時,您會更快消耗耐用度並提高資料保留問題的風險。

SSD 中的垃圾回收是控制器的靜態清理工作。它將仍然有效的頁面壓縮到新空間,並抹除現在大多是垃圾的區塊。這聽起來很奇怪,直到您記起 NAND 快閃記憶體無法覆寫已編程的頁面。它必須先抹除,而抹除是在區塊層級進行,而非每個頁面。因此,更新變成「先寫到別處,之後再清理」。