
三星聘请前AMD高级工程师,加速内部CPU核心研发进程
三星的目标是将自有CPU内核用于智能手机和笔记本电脑。基于这项新研发项目的首批处理器,预期于2027年面世,它们将放弃 Exynos品牌,而是称其为“Galaxy Chip(s)”。
铠侠和西数推出联合研发的218层BiCS 3D NAND第八代全新闪存技术
这两家公司是全球首批推出具有 3200 MT/s I/O 闪存 IC 的 3D NAND 制造商,其领先竞争对手 33%


SK海力士于近期公布其第八代3D NAND的细节,该产品堆叠层数超300层
当2024-25年新生产节点来临之际,新 NAND 的位密度提高近一倍,同时每片晶圆生产率也将显著提高。
· 美光DRAM营收同期减少41.2%,成为营收降幅最大的存储供应商
· 美光DRAM产能利用率为84%,预计2023全年将保持在相同水平
· 美光已开始使用其最新的1β纳米制程进行量产
1β工艺也将应用在台湾,且计划于2023年中投入晶圆,在23年下半年实现量产。

| Type | Supply | Price | |
|---|---|---|---|
|
DRAM Module ![]() |
DDR3 | ● | ▼ |
| DDR4 | ● | ▼ | |
| DDR5 | ● | ▼ | |
|
Flash Storage ![]() |
SLC | ● | ▂ |
| MLC | ● | ▂ | |
|
3D TLC (BiCS3) * 供应有限, 建议采用BiCS4或BiCS5 |
● | ▂ | |
| 3D TLC (BiCS4) | ● | ▂ | |
| 3D TLC (BiCS5) | ● | ▼ |
● 供给稳定 ● 供给吃紧 ▂ 持平 ▲ 上扬 ▼ 下跌
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