
Mass Production of Up to 36GB HBM4 Memory With Performance for AI Computing
• Samsung has started mass production of its HBM4 memory, becoming the first in the industry to do so. The chip reaches 11.7Gb/s and up to 13Gb/s for high‑performance AI workloads. It offers 24–36GB capacities via 12‑layer stacking, with plans to reach 48GB. HBM4 also delivers 40% better power efficiency and improved thermal performance.
KIOXIA Sampling QLC UFS V.4.1 Embedded Flash Memory Devices for High-Capacity Mobile Storage
• The chips use 8th‑generation BiCS FLASH 3D NAND and deliver major performance gains, including 25% faster sequential writes, 90% faster random reads, and 95% faster random writes over the previous generation. These devices target smartphones, tablets, PCs, AR/VR, IoT, and AI‑enabled products.
SanDisk AI‑driven storage upside: stock price jumps by 1,500% in almost a year
• AI data centers, hyperscalers, and enterprise customers are the primary growth engines, with revenue from AI‑related and semi‑custom clients rising 76% year over year. Besides, the firm’s industrial and automotive storage revenue grew 63%, showing that demand strength extends beyond pure AI infrastructure.


SKhynix to Establish U.S. Arm Specialized in AI Solutions
• SKhynix will establish a U.S.-based AI solutions subsidiary to drive new AI growth opportunities. Plans to leverage its advanced memory technologies, such as HBM, to deliver optimized AI data center systems and strengthen competitiveness. AI Co. will be formed through the restructuring of Solidigm, with SK hynix committing $10 billion in capital on a call basis. The new unit aims to enhance global AI strategies and deepen collaborations with AI firms in the U.S. and beyond.
Micron Breaks Ground on Advanced Wafer Fabrication Facility in Singapore
• Micron has begun construction on a new advanced wafer fabrication facility in Singapore. The company will invest about US$24 billion over 10 years to expand NAND manufacturing capacity. Production is expected to start in the second half of 2028 to meet rising AI‑related demand. The new fab will bolster Micron’s NAND Center of Excellence and support future technology transitions.

Driven by AI and datacenter growth, NAND flash demand has shifted sharply toward high-capacity enterprise SSDs, prompting a steady rise in 3D NAND output and a decline in Planar NAND—signaling a structural transition in supply to meet evolving market needs
Flash Sufficiency: CSP-driven AI expansion caused severe NAND shortages starting from Q3’25, and this might gradually improve in 2H26.
Price Trend: Overall NAND flash price rose sharply in Q4’25 with enterprise and cloud service provider (CSP) demand surging—driven by AI infrastructure expansion and server upgrades. The market condition is projected to continue in 2026, sustaining NAND flash prices at a high level.
DRAM Sufficiency: otal DRAM sufficiency remains in negative territory, indicating persistent undersupply, but the shortage begins to ease gradually after 1Q26.
Price Trend: DDR5 16Gb 5600MHz prices show a clear upward trend through 2025 into early 2026, with both contract and spot prices rising sharply from 4Q25 to 1Q26.