Samsung’s process technology improvement brings significant benefits for performance and power consumption
• The company aims to release chips made by SF1.4 technology in 2027,which is 1.4nm-class and will gain nanosheets from three to four.
• Mechanism of increasing nanosheets per transistor:
1.enhancement of driving current→improving chip performanceNegotiations between Kioxia and Western Digital terminated due to Hynix’s opposition
• WDC exited the talks with Kioxia after losing approval from Hynix, as the latter is indirect shareholder in Kioxia.
• The combined market share of these two firms for NAND memories stood at 35.4% as of Mar.,23, larger Samsung which accounted for 34.3%.
• The two companies are expected to continue partnering on chip development and plants investment despite existing status.
SK Hynix endeavors consolidating its position in future AI infrastructure
• The company recorded a 24% revenue growth and 38% operating losses narrowed compared with 2FQ23 thanks to strong demand for high-performance mobile flagship products and HBM3, a key product for AI applications, and high-capacity DDR5.
• Hynix plans to increase investments in HBM, DDR5 and LPDDR5. It will also increase the share of the products manufactured from the 1anm and 1bnm, the 4th and the 5th generations of the 10nm process.
Micron initiates construction on memory manufacturing fab
• The factory is located in Boise, home to Micron’s corporate HQs and the only DRAM R&D fabrication facility in North America.
• Co-locating the memory manufacturing fab is expected to provide multiple strategic benefits for Micron and the US semiconductor industry at large as Micron continues to drive industry leadership.
Type | Supply | Price | |
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DRAM Module |
DDR3 | ● | ▂ |
DDR4 | ● | ▂ | |
DDR5 | ● | ▂ | |
Flash Storage |
SLC | ● | ▂ |
MLC | ● | ▂ | |
3D TLC (BiCS3) *Limited Supply. We encourage you to migrate to BiCS4 and BiCS5 |
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3D TLC (BiCS4) | ● | ▂ | |
3D TLC (BiCS5) | ● | ▂ |
● Smooth supply ● Tight supply ▂ Flat ▲ Upward trend ▼ Downward trend
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