
Tesla signs $16.5 billion chip contract with Samsung Electronics
• The Samsung-Tesla deal comes at a sensitive time that the Trump administration’s stated intention of imposing 25% tariffs. This new contract may trigger a recovery in its foundry business’ 2-nanometer generation chip production and boost the company’s foundry sales by 10% annually.
Sandisk forms Technical Advisory Board to guide development and strategy for high-bandwidth flash memory technology
• High-bandwidth flash (HBF) is set to revolutionize edge AI by equipping devices with memory capacity and bandwidth capabilities that will support sophisticated models running locally in real time, this advancement will unlock a new era of intelligent edge applications, fundamentally changing how and where AI inference is performed.
Kioxia unveils LC9 series up to 245.76TB PCIe 5.0 NVMe 2.5-Inch and EDSFF E3.L form factor SSD
• This new capacity and form factor option is purpose-built for the performance and efficiency demands of GenAI environments. GenAI places unique demands on storage, including the need to store vast datasets for training large language models (LLMs), and to create embeddings and vector databases that support inference through retrieval augmented generation (RAG). These workloads require storage solutions with exceptional capacity, speed, and efficiency.


SK Hynix reports a 68% record jump in profit as demand for AI chips soars
• As a key supplier to AI giant Nvidia, the company is on track to double HBM chip sales for the full year, and new model launches by customers would drive high-end AI chip demand growth.
Micron starts to ship samples of HBM4 memory to key clients
• The new memory assemblies for next-generation AI and HPC processors feature a 36 GB capacity and offer bandwidth of 2 TB/s
• The samples rely on 24GB DRAM devices made on the company's 1ß (1-beta) DRAM process technology as well as logic base dies produced by TSMC using its 12FFC+ (2nm-class) or N5 (5nm-class) logic process technology.
• It is expected that Nvidia's codenamed Vera Rubin GPUs for datacenters will be among the first products to adopt HBM4 in late 2026.

SSD is entering its seasonal demand lull. Influenced by North American inventory and China’s stern approach towards smuggling of imported memory products, Q3 flash shipments have dropped to the lowest level of 2025
Flash Sufficiency: maintain at low level since 2024.
Price Trend: NAND flash price had a slight bound in 2025/B and is expected to maintain at an average level throughout 2025 as chip makers’ plan of production cut continues, despite the general demand isn’t significantly strong and some inventory exist.
DRAM Sufficiency: almost maintain at extreme low level in 2025 except a slight expansion in Q1’25 to fulfill surging demand under price uptrend.
Price Trend: 8Gb spot price has risen sharply and is projected to meet contract price level in Q3’25 considering consistent production cut on DDR4.

SSD SMART 是什麼?本文解析 SATA 與 NVMe SMART 差異,說明 Power On Hours、Temperature、Percentage Used、Available Spare 等常見健康參數,協助 Edge Storage 與工業設備掌握 SSD 健康狀態。

完整解析車用 SSD :AEC-Q100 IC 溫度等級(Grade 0~3)、IATF 16949、ISO/SAE 21434 資安與 PLP、pSLC 等子系統規格,並比較 eMMC/UFS/SSD 差異。威剛工業級提供車載、鐵道 NVR 與邊緣運算的寬溫儲存方案與選型支援。

NVMe SSDとは何か、NVMeとSATA SSDとの違い、そしてNVMeストレージが自動化、産業用システム、および高頻度データロギングに最適な理由について解説します。

ECC DRAMとは何か、エラー訂正の仕組み、そしてデータの整合性、システムの安定性、ネットワークセキュリティ、ミッションクリティカルなコンピューティングにおいて重要となる理由について解説します。

NVRストレージを選定する際の主な検討事項:HDD、SSD、監視用SSD、およびAI NVRのストレージ要件を比較し、安定した高性能監視システムを構築しましょう。

温度はすべてのSSDを左右する隠れた制限要因であり、SSDの温度範囲は性能仕様であると同時に信頼性仕様でもあります。持続的な負荷がかかると、NVMeファームウェアは複合温度を監視し、軽度または大幅なサーマルスロットリングを開始します。その結果、書き込みスループットが低下し、遅延は急上昇します。また、熱はNAND内部の電荷漏れを加速させ、保持期間の劣化を早めます。この影響は、プログラム/消去サイクルによってセルの劣化が進むほど悪化します。このため、耐久性の消耗が早まり、後にドライブが無通電状態で放置された際のデータ保持トラブルのリスクも高まります。