
Samsung focused heavily on AI-driven growth, HBM4 development, and strategic positioning against competitors
• The company is intensifying efforts to regain leadership in the HBM segment, where SK Hynix has recently gained ground.It also presented AI-optimized DRAM and NAND solutions on the roadmap, emphasizing scalability and energy efficiency for data centers and HPC applications.
Kioxia and SanDisk have officially begun operations at their new semiconductor fabrication facility in Kitakami, Japan
• This facility incorporates advanced environmental technologies, including energy-efficient systems and water recycling, which is a long-standing collaboration in NAND flash memory production between two firms, aiming to support next-generation storage solutions for consumer and enterprise applications.


SK hynix officially started mass production of HBM4, featuring 36GB per chip and up to 2TB/s bandwidth
• This memory is optimized for NVIDIA’s Rubin AI accelerators, offering up to 60% speed improvement over previous generations. It’s also designed to meet the demands of AI servers, data centers, and edge computing.
Micron announced a $200 billion investment in domestic semiconductor manufacturing
• The company is accelerating its memory production strategy by investing heavily in U.S.-based facilities, aiming to reshore memory production and reduce reliance on overseas manufacturing, especially for AI-driven high-bandwidth memory (HBM). It plans to phase out DDR4 and LPDDR4X production by late 2025 to early 2026.

WW SSD demand recovers from relatively lower level in Q2, and is expected to stay at a higher level than current stage in 2026.
Flash Sufficiency: maintain at low level since 2024. Suppliers have strengthened their production reduction efforts, concentrating manufacturing resources on AI-related demand.
Price Trend: overall NAND flash price is expected to increase continuously in Q4 with enterprise and cloud service provider (CSP) demand surging—driven by AI infrastructure expansion and server upgrades.
DRAM Sufficiency: Supply has come under significant pressure from Q4’25 through 2026 1H, as manufacturers phase out DDR4 production and reallocate capacity toward high-demand applications from the CSPs. This shift has led to a pronounced tightening in overall DRAM availability.
Price Trend: DDR4 prices remain high due to ongoing production cuts. Strong demand from CSPs and enterprise servers has tightened DDR5 supply, with manufacturers prioritizing DDR5 and HBM, driving prices up through Q4.

解析工業級SSD的TBW、DWPD、P/E循環與pSLC/MLC/TLC/QLC差異,依監控、網安、邊緣運算等工作負載選對耐用型固態硬碟。威剛工業級提供選型與樣品支援。

SSD SMART 是什麼?本文解析 SATA 與 NVMe SMART 差異,說明 Power On Hours、Temperature、Percentage Used、Available Spare 等常見健康參數,協助 Edge Storage 與工業設備掌握 SSD 健康狀態。

完整解析車用 SSD :AEC-Q100 IC 溫度等級(Grade 0~3)、IATF 16949、ISO/SAE 21434 資安與 PLP、pSLC 等子系統規格,並比較 eMMC/UFS/SSD 差異。威剛工業級提供車載、鐵道 NVR 與邊緣運算的寬溫儲存方案與選型支援。

NVMe SSDとは何か、NVMeとSATA SSDとの違い、そしてNVMeストレージが自動化、産業用システム、および高頻度データロギングに最適な理由について解説します。

ECC DRAMとは何か、エラー訂正の仕組み、そしてデータの整合性、システムの安定性、ネットワークセキュリティ、ミッションクリティカルなコンピューティングにおいて重要となる理由について解説します。

NVRストレージを選定する際の主な検討事項:HDD、SSD、監視用SSD、およびAI NVRのストレージ要件を比較し、安定した高性能監視システムを構築しましょう。