
Union rally causes Samsung fab production to plummet by 58% during night shift — over 40,000 people attended rally for better pay and bonuses
• The disruption was caused by a large union rally, nearly one‑third of Samsung’s semiconductor fab workforce, showing that even a short labor action can have an immediate and measurable impact on highly automated semiconductor operations. A prolonged strike could undermine Samsung’s lead in next‑generation memory (such as AI‑related chips) and potentially drive customers toward competitors like SK hynix, while also pushing prices higher across the industry.
Kioxia and Dell Technologies first to deliver high-density server with 9.8 PB of flash storage
• The 2 firms demonstrate a major leap in AI storage infrastructure by enabling a 2U server with up to 9.8PB of flash capacity using its LC9 Series 245.76TB NVMe SSDs, highlighting a shift toward ultra-high-density, flash-based architectures. By significantly reducing power consumption, rack space, and total cost of ownership compared to traditional deployments, Kioxia positions its high-capacity SSDs as a key enabler for scaling AI workloads, data lakes, and large-scale analytics efficiently within modern data centers.
SanDisk launches 320/520 SATA SSDs to restore affordable storage
• This move reflects a strategic return to value-oriented SATA products to address supply constraints and restore accessible storage options in a market increasingly dominated by expensive high-performance SSDs. Although limited by SATA interface speeds, these drives focus on affordability, stability, and broad compatibility—making them suitable for budget upgrades, legacy systems, and bulk storage needs.


SK hynix has become a central bottleneck in the AI-driven memory supply chain, with its available capacity effectively fully booked due to surging demand for HBM, DRAM, and NAND. In response, major tech customers are offering to fund new fabs and even purchase costly EUV lithography equipment to secure long-term supply, moving far beyond traditional procurement models. However, SK hynix remains cautious, as accepting such arrangements could limit its pricing power and strategic flexibility in an extremely tight, supplier-driven market.
Micron redefines AI performance with sampling of 256GB DDR5 server module
•This module is built on advanced 1-gamma DRAM and 3D-stacked (TSV-based) packaging, delivers significantly higher bandwidth (up to 9,200 MT/s), capacity, and power efficiency to meet the growing demands of AI workloads such as LLMs and real-time inference. This solution allows data centers to scale AI infrastructure more efficiently within power and thermal limits, accelerating the transition toward high-capacity, performance-optimized server memory architectures.

demand for legacy‑node SSDs is minimal within overall SSD shipments. Rapid expansion in AI‑related applications in 2026 is expected to drive sustained growth in demand for mainstream advanced‑node 3D‑type SSD products.
Flash Sufficiency: Supply has come under significant pressure from Q3’25 through 2026 1H, as manufacturers phase out DDR4 production and reallocate capacity toward high-demand applications from the CSPs. This shift has led to a pronounced tightening in overall DRAM availability.
Price Trend: contract prices continue to move upward, supported by AI-driven enterprise demand and supply discipline, while spot prices have softened due to weaker channel demand and improved short-term supply. Overall, DRAM prices are likely to continue a steady, gradual uptrend over the course of the year.
DRAM Sufficiency: Supply has come under significant pressure from Q3’25 through 2026 1H, as manufacturers phase out DDR4 production and reallocate capacity toward high-demand applications from the CSPs. This shift has led to a pronounced tightening in overall DRAM availability.
Price Trend: contract prices continue to move upward, supported by AI-driven enterprise demand and supply discipline, while spot prices have softened due to weaker channel demand and improved short-term supply. Overall, DRAM prices are likely to continue a steady, gradual uptrend over the course of the year.

Learn what an NVMe SSD is, how NVMe differs from SATA SSDs, and why NVMe storage is ideal for automation, industrial systems, and high-frequency data logging.

ECC DRAMとは何か、エラー訂正の仕組み、そしてデータの整合性、システムの安定性、ネットワークセキュリティ、ミッションクリティカルなコンピューティングにおいて重要となる理由について解説します。

NVRストレージを選定する際の主な検討事項:HDD、SSD、監視用SSD、およびAI NVRのストレージ要件を比較し、安定した高性能監視システムを構築しましょう。

温度はすべてのSSDを左右する隠れた制限要因であり、SSDの温度範囲は性能仕様であると同時に信頼性仕様でもあります。持続的な負荷がかかると、NVMeファームウェアは複合温度を監視し、軽度または大幅なサーマルスロットリングを開始します。その結果、書き込みスループットが低下し、遅延は急上昇します。また、熱はNAND内部の電荷漏れを加速させ、保持期間の劣化を早めます。この影響は、プログラム/消去サイクルによってセルの劣化が進むほど悪化します。このため、耐久性の消耗が早まり、後にドライブが無通電状態で放置された際のデータ保持トラブルのリスクも高まります。

SSDにおけるガーベージコレクションとは、コントローラーが静かに行うクリーンアップ作業のことです。まだ有効なページを新しい領域にまとめ、ほとんど不要になったブロックを消去します。奇妙に聞こえるかもしれませんが、NANDフラッシュはプログラム済みページを上書きできないことを思い出せば納得できます。まず消去する必要があり、この消去はページ単位ではなくブロック単位で行われます。そのため、更新処理は「別の場所に書き込んでから、後で消去する」という動作になります。

すべてのSSDには、OSからは見えない物理NANDが存在します。ベンダーはこのフラッシュの一部を、ユーザーには見えないコントローラー専用領域として確保しています。この予備領域がオーバープロビジョニング(OP)と呼ばれます。たとえば、TechTargetは、あるSSDは、物理NANDが976GBあるものの、ホストからアクセスできるのは800GBのみで、残りの176GBはコントローラー専用のOP領域として確保されたと報告しています。さらに、この領域にはFTLのマッピングテーブルや不良ブロックプールなどの内部メタデータも格納されます。このように、SSDのオーバープロビジョニングとは、ドライブ内部に存在するこの隠れた作業領域のことを指しています。