
Samsung announced UFS 4.0 offering 2x performance compared to UFS 3.1. It is said to be adopted in future automotive applications, Augmented reality (AR), and Virtual reality (VR). Mass production of the new memory is likely to commence in the third quarter of 2022.
Samsung plans to continue to expand the proportion of 3D NAND flash this year to 78% reported by TrendForce.
Samsung announced that the industry is looking to discontinue the production of DDR3 due to dwindling market demands, and higher demands for its DDR4 and DDR5 options instead.
KIOXIA and WDC have finalized a formal agreement to jointly invest in the first phase of the Fab7 (Y7) manufacturing facility in Yokkaichi Plant, Japan.
This joint-venture investment adds a sixth flash memory manufacturing facility to the Yokkaichi Plant, enhancing its position as the world's largest flash memory manufacturing site. The first phase of the Y7 facility will produce 3D flash memory including 112- and 162-layer and future nodes.
Activist investor Elliott Investment Management urged WDC on May 3rd to separate its Flash business and offered to invest US$1 billion to facilitate a sale or a spin-off of the business. WDC did not immediately respond to a request for comment.


SK Hynix announced that the industry is looking to discontinue the production of DDR3 due to dwindling market demands, and higher demands for its DDR4 and DDR5 options instead.
In the second fiscal quarter of 2022 Micron derived 73% of its revenue from DRAM chips and 25% from NAND chips. Those two segments also saw year-over-year revenue increases of 29% and 19%, respectively. Micron is taking several steps to capitalize on this growth, starting with a stronger focus in the data center market. In March, Micron announced the world's first vertically integrated 176-layer NAND SSD for the data center with latencies of under 2ms.

| Type | Supply | Price | |
|---|---|---|---|
|
DRAM Module ![]() |
DDR3 | ● | ▲ |
| DDR4 | ● | ▂ | |
| DDR5 | ● | ▂ | |
|
Flash Storage ![]() |
SLC | ● | ▂ |
| MLC | ● | ▂ | |
| 3D TLC(BiCS3) | ● | ▲ | |
| 3D TLC(BiCS4) | ● | ▂ | |
| 3D TLC(BiCS5) | ● | ▂ |
● Smooth supply ● Tight supply ▂ Flat ▲ Upward trend

Medical devices are rapidly becoming more digital. From medical imaging systems, patient monitoring devices, endoscopy systems, and automated dispensing cabinets to healthcare edge gateways, an increasing number of healthcare applications must continuously record medical images, sensor data, operation logs, alarm events, and system status while supporting diagnostic and treatment workflows.

Learn what an NVMe SSD is, how NVMe differs from SATA SSDs, and why NVMe storage is ideal for automation, industrial systems, and high-frequency data logging.

Learn what ECC DRAM is, how error correction works, and why it matters for data integrity, system stability, networking security, and mission-critical computing.

NVR storage is not only about capacity planning. It also affects data integrity and long-term system reliability. For AI NVR and 24/7 recording environments, storage devices must handle heavy write workloads, RAID rebuilding, and continuous recording. As a result, choosing between HDD vs. SSD and selecting the right surveillance SSD have become critical for modern surveillance deployment.

Temperature is the silent limiter of every SSD, and the SSD temperature range is both a performance spec as well as a reliability spec. Under sustained load, NVMe firmware tracks a composite temperature and will start to throttle lightly or heavily. So, write throughput drops hard and latency spikes. Heat also speeds charge leakage inside NAND, which accelerates retention loss. The effect worsens as cells age from program/erase wear. Thus, you burn endurance faster and raise data-retention trouble when the drive later remains unpowered.

Garbage collection in SSDs is the controller's quiet cleanup job. It compacts still-valid pages into new space and erases blocks that are now mostly junk. That might sound weird until you remember NAND flash can't overwrite a programmed page. It must erase first, and erase happens at the block level, not per page. So, updates become "write elsewhere, then clean later."